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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION *With TO-126 package *High breakdown voltage APPLICATIONS *Audio frequency power amplifier *High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -1 -0.1 1.5 UNIT V V V A A PD Total power dissipation TC=25 15 150 -55+150 W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1184 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-10A; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -1.0 V VBE Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 A IEBO Emitter cut-off current VEB=-5V; IC=0 -1 A hFE DC current gain IC=-100mA ; VCE=-5V 80 240 fT Transition frequency IC=-0.1A ; VCE=5V 120 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1184 Fig.2 Outline dimensions 3 |
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